z vp4525g document number: ds33 412 rev. 5 - 2 1 of 7 www.d iodes.com march 2015 ? diodes incorporated z vp4525g 250v p - channel enhancement mode mosfet product summary v (br)dss r ds( on ) i d t a = + 25c - 250 v 14 @ v gs = 10v - 265m a description this new generation trench mosfet features a unique structure combining the benefits of low on - resistance and fast switching, making it ideal for high efficiency power management applications. applications ? earth r ecall and d ialling s witches ? electronic h ook s witches ? high v oltage p ower mosfet d rivers ? telecom c all r outers ? solid s tate r elays features and benefits ? high v oltage ? low o n - resistance ? fast s witching s peed ? low g ate d rive ? low t hreshold ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliabil ity mechanical data ? case: s ot223 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: matte tin finish ? weight: 0. 112 grams ( a pproximate ) ordering information (note 4 ) part number marking reel size (inches) tape width (mm) quantity per reel z vp4525g ta z vp4525 7 12 1,000 note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptio ns applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those wh ich contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information equivalent circuit pin out - top view top view sot223 z vp4525 = product type marking code y ww = date code marking y or y = last digit of year (ex: 5 = 2015) ww or w w = week code (01~53) sot223 z vp 4525 d green 4310 yww zvn
z vp4525g document number: ds33 412 rev. 5 - 2 2 of 7 www.d iodes.com march 2015 ? diodes incorporated z vp4525g maximum ra tings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss - 250 v gate - source voltage v gss 40 v continuous drain current @ v gs = 10v; t a = + 25c ( note 5 ) @ v gs = 10v; t a = + 70 c ( note 5 ) i d - 265 - 212 m a pulsed drain current ( note 7 ) i dm - 1 a continuous source current (body diode) i s - 0.75 a pulsed source current (body diode) i s m - 1 a thermal characteristics ( @t a = +25c , unless otherwise spe cified.) characteristic symbol value unit power dissipation at t a = + 25c ( note 5 ) linear derating factor p d 2.0 16 w mw/c thermal resistance, junction to ambient ( note 5 ) r ja j a 26 c/w operating and storage temperature range t j , t stg - 55 to +150 c pulse power dissipation safe operating area derating curve transient thermal impedance
z vp4525g document number: ds33 412 rev. 5 - 2 3 of 7 www.d iodes.com march 2015 ? diodes incorporated z vp4525g electrical characteristics ( @t a = +25c , unless otherwise specified.) characteristic symbol min typ max un it test condition off characteristics drain - source breakdown voltage bv dss - 250 - 285 - v v gs = 0v, i d = - 1m a zero gate voltage drain current i dss - - 30 - 500 n a v ds = - 25 0 v, v gs = 0v gate - source leakage i gss - 1 10 0 na v gs = 4 0 v, v ds = 0 v on characteristics gate threshold voltage v gs( th ) - 0.8 - 1.5 - 2.0 v v ds = v gs , i d = - 1m a static drain - source on - resistance (note 8) r ds( on ) - 10 14 gs = - 10 v, i d = - 200m a - 13 18 gs = - 3.5 v, i d = - 100m a forward transconductance ( note 1 0) g fs 80 200 - m s v ds = - 10 v, i d = - 0.15 a diode forward voltage (note 8) v sd - - 0.9 7 v i s = - 200m a, v gs = 0v, t j = + 25c dynamic characteristic s input capacitance (note 10) c iss - 73 - pf v ds = - 25 v, v gs = 0v , f = 1.0mhz output capacitance (note 10) c oss - 12 .8 - pf reverse transfer capacitance (note 10) c rss - 3.91 - pf total gate charge (note s 9 &10) q g - 2.45 3.45 nc v gs = - 10 v , v ds = - 2 5 v i d = - 200m a gate - source charge (note s 9 &10) q gs - 0.22 0.31 nc gate - drain charge (note s 9 &1 0) q gd - 0.45 0.63 nc turn - on delay time ( note s 9 & 10 ) t d( on ) - 1.53 - ns v dd = - 30 v, i d = - 200m a , v gs = - 10 v , r g = 50 turn - on rise time ( note s 9 & 10 ) t r - 3.78 - ns turn - off delay time ( note s 9 & 10 ) t d( off ) - 17.5 - ns turn - off fall time ( n ote s 9 & 10 ) t f - 7.85 - ns reverse r ecovery t ime (note 10) t rr - 205 290 ns i f = - 200m a, di/dt = 100a/s, t j = +25c reverse r ecovery c harge (note 10) q rr - 21 29 nc notes : 5 . for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage o f single sided 1oz copper, in still air conditions . 6. for a device surface mounted on fr4 pcb measured at t 5 secs. 7. repetitive rating 25mm x 25mm fr4 pcb, d=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. 8 . measured under pulsed conditions. pulse width ? 300s; duty cycle ? 2%. 9. switching characteristics are independent of operating junction temperature . 1 0 . for design aid only, not subject to production testing. output characteristics output characteristics
z vp4525g document number: ds33 412 rev. 5 - 2 4 of 7 www.d iodes.com march 2015 ? diodes incorporated z vp4525g
z vp4525g document number: ds33 412 rev. 5 - 2 5 of 7 www.d iodes.com march 2015 ? diodes incorporated z vp4525g test circuits gate charge test circuit switching time test circuit switching time waveforms basic gate charge waveform
z vp4525g document number: ds33 412 rev. 5 - 2 6 of 7 www.d iodes.com march 2015 ? diodes incorporated z vp4525g package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap0200 1 at http://www.diodes.com/datasheets/ap0200 1 .pdf for the latest version. sot223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0 .15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm dimensions value (in mm) c 2.30 c1 6.40 x 1.20 x1 3.30 y 1.60 y1 1.60 y2 8.00 a1 a 7 7 d b e e1 b1 c e1 l 0 -10 q e 0.25 seating plane gauge plane x1 y1 y x c c1 y2
z vp4525g document number: ds33 412 rev. 5 - 2 7 of 7 www.d iodes.com march 2015 ? diodes incorporated z vp4525g important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated a nd its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herei n in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold dio des incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, di rectly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and ma rkings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is writte n in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not aut horized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. a re intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represen t that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and ac knowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding a ny devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated produc ts in such safety - critical, life support devices or systems. copyright ? 201 5, diodes incorporated www.diodes.com
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